semiconductor technical data khb019n20p1/f1 n channel mos field effect transistor 2006. 2. 20 1/7 revision no : 1 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converters and switching mode power supplies. features v dss =200v, i d =19a drain-source on resistance : r ds(on) =0.18 @v gs = 10v qg(typ.)=35nc maximum rating (tc=25 ) * : drain current limited by maximum junction temperature. g d s characteristic symbol rating unit khb019n20p1 KHB019N20F1 drain-source voltage v dss 200 v gate-source voltage v gss 30 v drain current @t c =25 i d 19 19* a @t c =100 12.1 12.1* pulsed (note1) i dp 76 76* single pulsed avalanche energy (note 2) e as 250 mj repetitive avalanche energy (note 1) e ar 14 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 p d 140 50 w derate above 25 1.12 0.4 w/ maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal characteristics thermal resistance, junction-to-case r thjc 0.89 2.5 /w thermal resistance, case-to-sink r thcs 0.5 - /w thermal resistance, junction-to- ambient r thja 62.5 62.5 /w dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 123 dim millimeters to-220is a a b b c c d d e e f f g g h h 1.47 max 13.0 max j j k k l l m mm n n o o p q q 123 1. gate 2. drain 3. source 3.18 0.1 + _ 0.8 0.1 + _ 3.3 0.1 + _ 0.5 0.1 + _ 10.16 0.2 + _ 15.87 0.2 + _ 12.57 0.2 + _ 2.54 0.2 + _ 2.54 0.2 + _ 2.76 0.2 + _ 6.68 0.2 + _ 4.7 0.2 + _ 3.23 0.1 + _ 6.5 p
2006. 2. 20 2/7 revision no : 1 khb019n20p1/f1 electrical characteristics (tc=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 200 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.18 - v/ drain cut-off current i dss v ds =200v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2 - 4 v gate leakage current i gss v gs = 30v, v ds =0v - - 100 na drain-source on resistance r ds(on) v gs =10v, i d =9.5a - 0.14 0.18 dynamic total gate charge q g v ds =160v, i d =19a v gs =10v (note4,5) - 35 44 nc gate-source charge q gs - 4.8 - gate-drain charge q gd - 18 - turn-on delay time t d(on) v dd =100v r l =5 r g =25 (note4,5) - 12 30 ns turn-on rise time t r - 33 70 turn-off delay time t d(off) - 130 270 turn-off fall time t f - 75 160 input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 900 1170 pf reverse transfer capacitance c rss - 213 277 output capacitance c oss - 80 104 source-drain diode ratings continuous source current i s v gs khb019n20p1/f1 gate - source voltage v gs (v) i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 -1 10 0 10 1 10 0 10 1 10 0 10 -1 10 1 68 410 2 i d - v gs r ds(on) - i d drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) i s - v sd 0.0 0.4 0.8 2.0 1.2 1.6 2.4 reverse drain current i s (a) 0.0 0.6 0.8 0.2 0.4 01020 4050 30 60 source - drain voltage v sd (v) v gs = 10v v gs = 20v 10 0 10 - 1 10 1 normalized breakdown voltage bv dss bv dss - t j r ds(on) - t j -100 -50 0.8 0.9 1.2 1.0 1.1 050 100 150 junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance junction temperature tj ( ) c 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs = 10v i ds = 9.5v v gs = 0v i ds = 250 150 c 25 c v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v -55 c 150 c 25 c 2006. 2. 20 3/7 revision no : 1
khb019n20p1/f1 drain current i d (a) gate - charge q g (nc) c - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 12 10 6 2 4 8 20 10 40 30 0 q g - v gs safe operation area capacitance (pf) gate - source voltage v gs (v) 0 1000 2000 500 1500 5000 3000 4000 2500 3500 4500 10 -1 10 0 10 1 10 1 10 1 10 -1 10 0 10 0 10 2 10 2 frequency = 1mhz drain current i d (a) drain - source voltage v ds (v) safe operation area 10 1 10 1 10 -1 10 0 10 0 10 2 10 2 0 15 10 5 20 75 150 125 50 100 25 drain current i d (a) (khb019n20p1) (KHB019N20F1) i d = 19a junction temperature t j ( ) i d - t j v ds = 40v v ds = 100v v ds = 160v t c = 25 t j = 150 single nonrepetitive pulse c c operation in this area is limited by r ds(on) t c = 25 t j = -150 single nonrepetitive pulse c c 10 ms 1 ms 10 s 100 s operation in this area is limited by r ds(on) dc 1ms 10ms 100 s dc c oss c iss c rss c 2006. 2. 20 4/7 revision no : 1
khb019n20p1/f1 {khb019n20p1} {KHB019N20F1} square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 1 10 -4 10 -2 10 -1 10 0 10 0 r th normalized transient thermal resistance normalized transient thermal resistance r th - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm duty=0.5 0.01 0.05 0.1 0.2 0.02 single pulse duty=0.5 0.01 0.05 0.1 0.2 0.02 single pulse 2006. 2. 20 5/7 revision no : 1
khb019n20p1/f1 - gate charge i d i d v ds v gs v gs v ds v ds v gs 1.0 ma 0.8 v dss 0.5 v dss fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t r t d(off) t off t d(on) t on t f t p 10% 90% - resistive load switching - single pulsed avalanche energy v ds (t) i d (t) v ds v gs 50v 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v gs 2006. 2. 20 6/7 revision no : 1
khb019n20p1/f1 - source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.8 v dss 2006. 2. 20 7/7 revision no : 1
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